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2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543
100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor
FEATURES
* Low RDS(on) * Ease of Paralleling * Qualified to MIL-PRF-19500/543
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. I i i e l y s i e f r t s dal utd o Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25 C PART NUMBER 2N6764 2N6766 2N6768 2N6770 V DS, Vo t ls 100 200 400 500 R DS(on) .055 .085 .0 3 .0 4 I, A m p s D 38 30 14 12
S C H E M ATIC
1.53 REF. 0.875 MAX. 0.135 MAX.
MECHANICAL OUTLINE
1.197 1.177 0.675 0.655 0.440 0.420
0.188 R. MAX. 0.450 0.250 0.312 MIN.
SEATING PLANE
0.043 0.038
0.225 0.205
0.161 0.151
0.525 R. MAX.
Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate
2 PLCS. Note: For part number 2N6764 and 2N6766 the mechanical dimensions are the same as above except the lead diameter is 0.058 min to 0.063 max.
7 03 R0
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted T
Parameter I @ VGS = 10V, TC = 25C D Continuous Drain Current JANTXV, JANTX, 2N6764 38 24 152 150 12 . 20
2
Units A A A W W/C V mJ A C C
I @ VGS = 10V, TC = 100C Continuous Drain Current D IM D P D @ TC = 25C Pulsed Drain Current
1
Maximum Power Dissipation Linear Derating Factor
VG S EA S IR A TJ TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature
150 3 8
4
4
-55 to 150 300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle" Cag aet-ri "ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r
Min. 100 20 . 50 8 25 -
Typ.
Max.
Units V
Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 2 A 3 0, 4 VG S = 1 V ID = 3 A 3 0, 8 VDS = VG S, D = 250 A I VD S = 8 V VG S = 0V 0, VD S = 8 V VG S = 0 , TJ = 125C 0, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 38A 0, VD S = 50 V See note 4 VD D = 5 V ID = 38A, RG =2.35 0, See note 4
-
0.055 0.065 40 . 25 250 100 -100 125 22 65 35 190 170 130
V A nA nA nC nC nC ns ns ns ns
Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient
Typ. -
Max. 19 . 500
Units V ns
Test Conditions TJ = 2 , IS = 38A 3,VG S = 0 V 5C TJ = 2 , IF= 38A,d/t< 100A/s 3 5C id
Min. -
Typ. 0.21 -
Max. 0.83 48
Units
Test Conditions
C/W
Mutn sraefa, onig ufc lt smooth, and greased
Typical socket mount
1 . 2. 3 . 4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0, trig C 0 @VD D= 5 V S a t n TJ = 25 , L = 1 0 H + 10%, RG = 25 , Peak IL = 38A P l e w d h < 300 s; Duty Cycle < 2 % us it See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted T
Parameter I @ VGS = 10V, TC = 25C D Continuous Drain Current JANTXV, JANTX, 2N6766 30 19 120 150 12 . 20
2
Units A A A W W/C V mJ A C C
I @ VGS = 10V, TC = 100C Continuous Drain Current D IM D P D @ TC = 25C Pulsed Drain Current
1
Maximum Power Dissipation Linear Derating Factor
VG S EA S IR A TJ TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature
6 0 3 0
4
4
-55 to 150 300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle" Cag aet-ri "ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r
Min. 200 20 . 55 8 30 -
Typ.
Max.
Units V
Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 1 A 3 0, 9 VG S = 1 V ID = 3 A 3 0, 0 VDS = VG S, D = 250 A I VD S = 1 0 V VG S = 0V 6, VD S = 1 0 V VG S = 0 , TJ = 125C 6, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 30A 0, VD S = 100V See note 4 VD D = 1 0 V ID = 30A, RG =2.35 0, See note 4
-
.085 .090 40 . 25 250 100 -100 115 22 60 35 190 170 130
V A nA nA nC nC nC ns ns ns ns
Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient
Typ. -
Max. 19 . 950
Units V ns
Test Conditions TJ = 2 , IS = 30 A 3,VG S = 0 V 5C TJ = 2 , IF= 30 A,d/t<100A/s 3 5C id
Min. -
Typ. 0.21 -
Max. 0.83 48
Units
Test Conditions
C/W
Mutn sraefa, onig ufc lt smooth, and greased
Typical socket mount
1 . 2. 3 . 4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0 , trig C 0 0 @VD D= 5 V S a t n TJ = 25 , L = 1 0 H + 10%, RG = 25 , Peak IL = 3 A P l e w d h < 300 s; Duty Cycle < 2 % us it See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted T
Parameter I @ VGS = 10V, TC = 25C D Continuous Drain Current JANTXV, JANTX, 2N6768 14 90 . 56 150 12 . 20
2
Units A A A W W/C V mJ A C C
I @ VGS = 10V, TC = 100C Continuous Drain Current D IM D P D @ TC = 25C Pulsed Drain Current
1
Maximum Power Dissipation Linear Derating Factor
VG S EA S IR A TJ TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Operating Junction Storage Temperature Range Lead Temperature
1
1. 13 1 4
4
4
-55 to 150 300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle" Cag aet-ri "ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r
Min. 400 20 . 52 50 . 25 -
Typ.
Max.
Units V
Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 9 0 A 3 0, . VG S = 1 V ID = 1 A 3 0, 4 VDS = VG S, D = 250 A I VD S = 3 0 V VG S = 0V 2, VD S = 3 0 V VG S = 0 , TJ = 125C 2, V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 14A 0, VD S = 200 V See note 4 VD D = 2 0 V ID = 14 A, RG = 2.35 0, See note 4
-
.300 .400 40 . 25 250 100 -100 110 18 65 35 190 170 130
V A nA nA nC nC nC ns ns ns ns
Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient
Typ. -
Max. 17 . 1200
Units V ns
Test Conditions TJ = 2 , IS = 14 A 3,VG S = 0 V 5C TJ = 2 , IF= 14 A,d/t<100A/s 3 5C id
Min. -
Typ. 0.21 -
Max. 0.83 48
Units
Test Conditions
C/W
Mutn sraefa, onig ufc lt smooth, and greased
Typical socket mount
1 . 2. 3 . 4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0 , trig C 0 4 @VD D= 5 V S a t n TJ = 25 , L = 1 0 H + 10%, RG = 25 , Peak IL = 1 A P l e w d h < 300 s; Duty Cycle < 2 % us it See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted T
Parameter I @ VGS = 10V, TC = 25C D Continuous Drain Current JANTXV, JANTX, 2N6770 12 7.75 48 150 12 . 20
2
Units A A A W W/C V mJ A C C
I @ VGS = 10V, TC = 100C Continuous Drain Current D IM D P D @ TC = 25C Pulsed Drain Current
1
Maximum Power Dissipation Linear Derating Factor
VG S EA S IR A TJ TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature
80 . 1 2
4
4
-55 to 150 300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage R DS(on) S a i D a n t - o r e ttc ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage I Zero Gate Voltage Drain DSS Current IS S Gate -to-Source Leakage Forward G IS S Gate -to-Source Leakage Reverse G Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gt-oDan(Mle" Cag aet-ri "ilr) hre t Turn-On Delay Time D(on) t Rise Time r t(off) Turn-Off Delay Time D t Fl Tm al ie r
Min. 500 20 . 55 50 . 27 -
Typ.
Max.
Units V
Test Conditions VG S = 0 , ID =1.0 mA, V VG S = 1 V ID = 7 7 A 3 0, .5 VG S = 1 V ID = 1 A 3 0, 2 VDS = VG S, D = 250 A I VD S = 4 0 V VG S = 0V 0, VD S = 400V, VG S = 0 , TJ = 125C V VG S = 20 V VG S = - 0 V 2 VG S = 1 V ID = 12 A 0, VD S = 250 V See note 4 VD D = 2 0 V ID = 12 A, RG = 2.35 5, See note 4
-
.400 .500 40 . 25 250 100 -100 120 19 70 35 190 170 130
V A nA nA nC nC nC ns ns ns ns
Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage VS D t Reverse Recovery Time t r r Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient
Typ. -
Max. 17 . 1600
Units V ns
Test Conditions TJ = 2 , IS = 12A 3,VG S = 0 V 5C TJ = 2 , IF= 12A,d/t<100A/s 3 5C id
Min. -
Typ. 0.21 -
Max. 0.83 48
Units
Test Conditions
C/W
Mutn sraefa, onig ufc lt smooth, and greased
Typical socket mount
1 . 2. 3 . 4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie aig us it iie y aiu ucin eprtr. 0 , trig C 0 @VD D= 5 V S a t n TJ = 25 , L = 1 0 H + 10%, RG = 25 , Peak IL = 12A P l e w d h < 300 s; Duty Cycle < 2 % us it See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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